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| UTC X0202/A SENSITIVE SCRs DESCRIPTION The X0202/A SCR series is suitable for all applications where the available gate current is limited, such as ground fault circuit interruptors, overvoltage crowbar protection in low power supplies, capacitive ignition circuit,...... 1 SCR FEATURES: *IT(RMS) : 1.25A *VDRM/VRRM :600/800V TO-92 1:CATHODE 2:GATE 3:ANODE ABSOLUTE MAXIMUM RATINGS (unless otherwise specified ) PARAMETERS Peak Repetitive Forward and Reverse Blocking Voltage (Tj=110C, RGK=1k) X0202 X0202A RMS On-State Current (TI=55C) 180C conduction angle Average On-State Current (TI=55C) 180C conduction angle Non Repetitive Surge Peak on-state Current (tp=8.3ms Tj=25C) Non Repetitive Surge Peak on-state Current (tp=10ms Tj=25C) I t Value for fusing (tp=10ms Tj=25C) Critical Rate Of Rise Of On-state Current IG=2*IGT,tr100ns, f=60Hz, Tj=125C Peak Gate Current (p=20s Tj=125C) Average Gate Power Dissipation (Tj=125C) Storage Junction Temperature Range Operating Junction Temperature Range SYMBOL RATINGS UNIT VDRM, VRRM IT(RMS) IT(AV) ITSM ITSM It dI/dt IGM PG(AV) Tstg Tj 600 800 1.25 0.8 25 22.5 2.5 50 1.2 0.2 -40~150 -40~125 V A A A A A2S A/s A W C C UTC UNISONIC TECHNOLOGIES CO. LTD 1 QW-R301-005,A UTC X0202/A ELECTRICAL CHARACTERISTICS(Tj=25C, unless otherwise specified) PARAMETER Peak Forward or Reverse Blocking Current Tj =25C Tj =125C Peak Forward On-State Voltage Gate Trigger Current Gate Trigger Voltage Gate Non-Trigger Voltage Holding Current Latch Current Critical Rate of Rise of Off-State Voltage Peak Reversed Gate Voltage Threshold Voltage Dynamic Resistance SCR SYMBOL IDRM, IRRM VTM IGT VGT VGD IH IL dv/dt VRG VTO Rd ITM= 2.5A, tp=380s VD=12V, RL=140 VD=12V, RL=140 VD=VDRM, RL=3.3k,RGK=1k, (Tj=125C) IT=50mA, RGK=1k IG=1mA, RGK=1k VD=67%VDRM, RGK=1k, (Tj=110C) IRG=10 A (Tj=125C) (Tj=125C) TEST CONDITIONS VDRM=VRRM, RGK=1k MIN TYP MAX 5 500 1.45 200 0.8 UNIT A A V A V V 0.1 5 6 10 8 0.9 200 mA mA V/s V V m THERMAL CHARACTERISTICS SYMBOL Rth(j-I) Rth(j-a) PARAMETER Junction to leads Junction to ambient VALUE 60 150 UNIT C/W C/W TYPICAL CHARACTERISTICS CURVE Figure 1.Maximum Average Power Dissipation vs. Average On-stage Current 1.4 1.2 1.0 0.8 0.6 0.6 0.4 360 0.2 0.0 0.0 IT(av)(A) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 0.4 0.2 0.0 0 25 Tlead () 50 75 100 125 =180 Figure 2-1.Average and D.C. On-state Current vs.Lead Temperature D.C. 1.2 1.0 0.8 P(W) IT(av)(A) =180 UTC UNISONIC TECHNOLOGIES CO. LTD 2 QW-R301-005,A UTC X0202/A Figure 2-2.Average and D.C. On-state Current vs.Ambient Temperature(Device Mounted On FR4 with Recomended Pad Layout) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 =180 D.C. 0.1 1.0 Figure 3. Relative Variation of Thermal Impedance Junction to Ambient vs.Pulse Duration SCR Tlead() 0 25 50 75 100 125 0.01 1E-2 1E-1 1E+0 tp(s) 1E+1 1E+2 5E+2 1.50 1.25 1.00 0.75 0.50 0.25 Figure 4.Relative Variation of Gate Trigger Current,Holding Current and Latching Current Versus Junction Temperature (typical values). IGT,IH,IL[Tj]/GT,IH,IL[Tj]=25 Figure 5.Relative Variation of Holding Current vs.Gate-cathode Resistance (typical values). 4.0 3.5 3.0 IH[Rgk]/IH[Rgk=1k ] Tj=25 IH&IL (Rgk=1k ) 2.5 2.0 1.5 IGT 1.0 0.5 Rgk(k ) 1E-1 1E+0 1E+1 Tj() 0.0 -40 -20 0 20 40 60 80 100 120 140 0.0 1E-2 10.0 Figure 6.Relative Variation of dV/dt immunity vs.Gate-Cathode Resistance (typical values). dV/dt[Rgk]/dV/dt[Rgk=1k ] Tj=125() VD=0.67*VDRM Figure 7.Relative Variation of dV/dt Immunity vs Gate-cathode Capacitance (typical values). 20 18 16 14 12 dV/dt[Rgk]/dV/dt[Rgk=1k ] Tj=125() VD=0.67*VDRM Rgk=1k ) 1.0 10 8 6 4 2 0 0 2 4 6 8 Rgk(k ) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Cgk(nF) 10 12 14 16 18 20 22 UTC UNISONIC TECHNOLOGIES CO. LTD 3 QW-R301-005,A UTC X0202/A Figure 8.Surge Peak On-state Current vs.Number of Cycles. 25 ITSM(A) 300 tp=10ms one cycle 15 10 5 0 Tamb=25() Repetitive Number of cycles I2t 10 100 1000 1 0.01 tp(ms) 0.10 1.00 Tjinitial=25() Nonrepetitive 10 100 SCR Figure 9.Non-repetitive Surge Peak on-state Current for a Sinusoidal pulse with width tp<10ms,and Corresponding Value of I t ITSM(A),I2t(A2S) dI/dt Limitation Tjinital=25 ITSM 20 1 10.00 Figure 10.On-state Characteristics (maximum values) 3E+1 ITM(A) Tj max Vto=0.9V 1E+1 Rd=200m ) TJ=TJ max 1E+0 1E-1 0.5 VTM(V) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD 4 QW-R301-005,A |
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